Product Details
Place of Origin: Shandong China
Brand Name: JIURUNFA
Certification: ISO9001
Model Number: Zinc Oxide
Payment & Shipping Terms
Minimum Order Quantity: 1 Ton
Price: Negotiable
Packaging Details: 25/50KG woven bag lined with plastic bags, or according to the requirements of customers.
Delivery Time: 7-15 Days
Payment Terms: L/C,D/A,D/P,T/T
Supply Ability: 30000 Ton/Month
Uv Absorption: |
Strong UV Absorption |
Band Gap: |
3.3 EV |
Formula: |
ZnO |
Indicator: |
Pb≤20 As≤5 Cd≤8 Surface Area≥30m²/g |
Molecular Weight: |
81.408 G/mol |
Electrical Resistivity: |
10^10 Ω·m |
Boiling Point: |
2360°C |
Percent: |
99.5% 99.7% |
Uv Absorption: |
Strong UV Absorption |
Band Gap: |
3.3 EV |
Formula: |
ZnO |
Indicator: |
Pb≤20 As≤5 Cd≤8 Surface Area≥30m²/g |
Molecular Weight: |
81.408 G/mol |
Electrical Resistivity: |
10^10 Ω·m |
Boiling Point: |
2360°C |
Percent: |
99.5% 99.7% |
Zinc oxide (ZnO) is an inorganic compound insoluble in water but soluble in acids and strong bases. As a versatile chemical additive, it finds applications in plastics, silicate products, synthetic rubber, lubricants, paints, coatings, pharmaceuticals, adhesives, food products, batteries, and flame retardants. With its large energy band gap and high exciton binding energy, ZnO demonstrates excellent transparency and room-temperature luminescence, making it valuable for semiconductor applications including LCD displays, thin-film transistors, and LEDs.
Uses zinc ingots or smelting byproducts as raw materials. Zinc vapor is oxidized at 1000°C to produce ZnO particles (0.1-10μm) with 99.5-99.7% purity. This method accounts for the majority of global production.
Processes zinc-containing ores through carbothermal reduction, yielding coarser particles (75-95% purity) primarily for rubber and ceramic industries.
Produces high-purity nano-sized ZnO (1-100nm) through either acid or ammonia processes:
Property | Description |
---|---|
Chemical Formula | ZnO |
Particle Size | 0.1μm - 100nm (varies by production method) |
Purity | 75% - 99.7% (method dependent) |
Band Gap | 3.37 eV (excellent semiconductor properties) |